Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis

Cheng, B.J., Roy, S., Roy, G. and Asenov, A. (2003) Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis. In: 33rd Conference on European Solid-State Device Research. ESSDERC '03, Estoril, Portugal, 16-18 Sep 2003, pp. 437-440. ISBN 0780379993 (doi: 10.1109/ESSDERC.2003.1256907)

Abstract

MOSFET parameter fluctuations, resulting from the 'atomistic' granular nature of matter, are predicted to be a critical roadblock to the scaling of devices in future electronic systems. A methodology is presented which allows compact model based circuit analysis tools to exploit the results of 'atomistic' device simulation, allowing investigation of the effects of such fluctuations on circuits and systems. The methodology is applied to a CMOS inverter, ring oscillator, and analogue NMOS current mirror as simple initial examples of its efficacy.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Roy, Dr Gareth and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Cheng, B.J., Roy, S., Roy, G., and Asenov, A.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Physics and Astronomy
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 0780379993
• Copyright Holders: Copyright © 2003 Institute of Electrical and Electronics Engineers
• First Published: First published in ESSDERC '03 : Proceedings of the 33rd Conference on European Solid-State Device Research (2003):437-440
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher