Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications

Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, Hong Kong, 16-18 December 2003, pp. 331-334. ISBN 0780377494 (doi: 10.1109/EDSSC.2003.1283543)

Abstract

Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping strategies on device performance and linearity. The device geometry is sensitive to both RF performance and device linearity. Doped channel devices are found to be promising for high linearity applications. Trade-off design strategies are required for reconciling the demands of high device performance and high linearity simultaneously. The simulations also suggest that gate length scaling helps to achieve higher RF performance, but decreases the linearity.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Thayne, Prof Iain and Watling, Dr Jeremy and Elgaid, Dr Khaled and Roy, Professor Scott
• Authors: Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I., and Hackbarth, T.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 0780377494
• Copyright Holders: Copyright © 2003 Institute of Electrical and Electronics Engineers
• First Published: First published in IEEE Conference on Electron Devices and Solid-State Circuits (2003):331-334
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher