The impact of random doping effects on CMOS SRAM cell

Cheng, B., Roy, S. and Asenov, A. (2004) The impact of random doping effects on CMOS SRAM cell. In: 30th European Solid-State Circuits Conference (ESSCIRC 2004)., Leuven, Belgium, 21-23 September 2004, pp. 219-222. ISBN 0780384806 (doi: 10.1109/ESSCIR.2004.1356657)

Abstract

The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale MOSFETs. Using a statistical circuit simulation methodology, which can fully collate intrinsic parameter fluctuation information into compact model sets, the impact of random device doping on 6-T SRAM static noise margins, and read and write characteristics are investigated in detail for well-scaled 35 nm physical gate length devices. We conclude that intrinsic parameter fluctuations will become a major limitation to further conventional MOSFET SRAM scaling.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen
• Authors: Cheng, B., Roy, S., and Asenov, A.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 0780384806
• Copyright Holders: Copyright © 2004 Institute of Electrical and Electronics Engineers
• First Published: First published in ESSCIRC 2004 : Proceedings of the 10th International Workshop on Computational Electronics (2004):159-160
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher