Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells

Samsudin, K., Cheng, B., Brown, A.R., Roy, S. and Asenov, A. (2005) Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells. In: IEEE International SOI Conference, Honolulu, Hawaii, 3-6 October, pp. 60-61. ISBN 0780392124 (doi: 10.1109/SOI.2005.1563533)

Abstract

The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has been developed. The impact of discrete random dopants in the source and drain regions on 6T SRAM cells has been investigated for well scaled ultra thin body (UTB) SOI MOSFETs with physical channel length in the range of 10nm to 5nm.

• Item Type: Conference Proceedings
• Keywords: 6T SRAM, Cells, Device, Fluctuation, Fluctuations, Impact, Random Dopant, SRAM, UTB-SOI
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott
• Authors: Samsudin, K., Cheng, B., Brown, A.R., Roy, S., and Asenov, A.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 0780392124
• Copyright Holders: Copyright © 2005 Institute of Electrical and Electronics Engineers
• First Published: First published in IEEE International SOI Conference : proceedings (2005):60-61
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher