UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Samsudin, K., Cheng, B., Brown, A.R., Roy, S. and Asenov, A. (2005) UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation. In: 35th European Solid State Device Research Conference, Grenoble, France., 12-16 September 2005, pp. 553-556. ISBN 0780392035 (doi: 10.1109/ESSDER.2005.1546708)



Publisher's URL: http://dx.doi.org/10.1109/ESSDER.2005.1546708


Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs. Ultra thin body (UTB) SOI MOSFETs are expected to replace conventional MOSFETs for integrated memory applications due to superior electrostatic integrity and better resistant to some of the sources of intrinsic parameter fluctuations. To fully realise the performance benefits of UTB SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuation information into the compact model is developed. The impact on 6T SRAM static noise margin characteristics of discrete random dopants in the source/drain regions and body-thickness variations has been investigated for well scaled devices with physical channel length in the range of 10nm to 5nm. A comparison with the behaviour of a 6T SRAM based on a conventional 35nm MOSFET is also presented.

Item Type:Conference Proceedings
Keywords:Device, fluctuation, intrinsic parameter fluctuation, SRAM, stability, Utb Soi, Utb-Soi
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott
Authors: Samsudin, K., Cheng, B., Brown, A.R., Roy, S., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 2005 Institute of Electrical and Electronics Engineers
First Published:First published in Proceedings of ESSDERC 2005 : 35th Solid State Device Research European Conference (2005):553-556
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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