Hild, K., Sweeney, S.J. , Marko, I.P., Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H. (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 197-202. (doi: 10.1002/pssb.200672571)
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Abstract
We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge-emitting lasers operating near 1.3 μm. Below ∼100 K, the threshold current, Ith, is dominated by the radiative current, I rad, and is proportional to temperature, T. However, above 100 K, non-radiative recombination increases abruptly such that by 125 K it accounts for 40% of Ith. From high pressure measurements at this temperature, we find that the non-radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non-radiative recombination accounts for ∼90% Ith and gives rise to a super-linear temperature dependence of Ith, in spite of the fact that I rad ∝ T. At room temperature the non-radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γ-minimum of the GaAs barriers and possibly also into the X-minima of the GaAsP confining layers.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Hild, K., Sweeney, S.J., Marko, I.P., Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S., and Zhang, Y.-H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Physica Status Solidi B: Basic Solid State Physics |
| Publisher: | Wiley |
| ISSN: | 0370-1972 |
| ISSN (Online): | 1521-3951 |
| Published Online: | 27 December 2006 |
| Related URLs: |
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