Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure

Marko, I.P. et al. (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 82-86. (doi: 10.1002/pssb.200672544)

Abstract

We present the results based upon a systematic study of the properties of quantum dot (QD) lasers with emission wavelengths around 0.98 and 1.3 µm at room temperature and atmospheric pressure. To investigate the radiative and non-radiative components of the threshold current, we studied the temperature and high hydrostatic pressure dependencies of spontaneous and stimulated emission. Although important parameters such as lasing wavelength, QD density, ridge width, cavity length, threshold current density (J th) varied greatly, we found that all the lasers have nearly the same dependence of the radiative component, J rad, on band gap when it was tuned by the application of high pressure. It was observed that J rad increases strongly with band gap. Therefore the different dependencies of J th are explained in terms of the relative importance of different non-radiative recombination mechanisms, such as Auger recombination and thermal carrier escape.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Marko, I.P., Adams, A.R., Sweeney, S.J., Massé, N.F., Krebs, R., Reithmaier, J.P., Forchel, A., Mowbray, D.J., Skolnick, M.S., Liu, H.Y., Groom, K.M., Hatori, N., and Sugawara, M.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Physica Status Solidi B: Basic Solid State Physics
• Publisher: Wiley
• ISSN: 0370-1972
• ISSN (Online): 1521-3951
• Published Online: 27 December 2006

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