Band alignment and carrier recombination in GaAsSb/GaAs quantum wells

Hild, K., Sweeney, .J. , Jin, S.R., Healy, S.B., O'Reilly, E.P., Johnson, S.R., Wang, J.-B. and Zhang, Y.-H. (2006) Band alignment and carrier recombination in GaAsSb/GaAs quantum wells. In: 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006, pp. 1431-1432. ISBN 9780735403970 (doi: 10.1063/1.2730443)

Abstract

Using a combination of experimental and theoretical techniques, we investigated the band alignment and the carrier recombination processes occurring in GaAsSb/GaAs structures. We find that for Sb fractions ∼30%, the band alignment is slightly type II. From studies on lasers based upon this material we show that at the high carrier densities required to achieve threshold, at room temperature, the devices are dominated by carrier leakage and non‐radiative Auger recombination.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hild, Dr Konstanze and Sweeney, Professor Stephen
• Authors: Hild, K., Sweeney, .J., Jin, S.R., Healy, S.B., O'Reilly, E.P., Johnson, S.R., Wang, J.-B., and Zhang, Y.-H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: AIP Conference Proceedings
• ISSN: 1551-7616
• ISBN: 9780735403970

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