Chamings, J., Adams, A.R., Sweeney, S.J. , Kunert, B., Volz, K. and Stolz, W. (2008) Thermal properties of Silicon compatible GaNAsP SQW lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 61-62. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636009)
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Abstract
We report on the temperature dependent properties of GaNAsP/GaP-based SQW lasers. While the radiative component of threshold is relatively temperature stable, the threshold current increases strongly with temperature and is attributed to a leakage process.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Chamings, J., Adams, A.R., Sweeney, S.J., Kunert, B., Volz, K., and Stolz, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Conference Digest - IEEE International Semiconductor Laser Conference |
| ISSN: | 1947-6981 |
| ISBN: | 9781424417827 |
| Related URLs: |
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