The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers

Crowley, M.T., Marko, I.P., Masse, N.F., Andreev, A.D., Sweeney, S.J. , O'Reilly, E.P. and Adams, A.R. (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 117-118. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636037)

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Abstract

The optical matrix element for excited-states is significantly weaker than the ground-state leading to thermally stable radiative recombination. This is not so for non-radiative Auger recombination, causing a sharp increase in threshold current with temperature.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Crowley, M.T., Marko, I.P., Masse, N.F., Andreev, A.D., Sweeney, S.J., O'Reilly, E.P., and Adams, A.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Conference Digest - IEEE International Semiconductor Laser Conference
ISSN:1947-6981
ISBN:9781424417827
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