Chamings, J., Adams, A.R., Sweeney, S.J. , Kunert, B., Volz, K. and Stolz, W. (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers. Applied Physics Letters, 93(10), 101108. (doi: 10.1063/1.2975845)
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Abstract
We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ=890 nm). Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Chamings, J., Adams, A.R., Sweeney, S.J., Kunert, B., Volz, K., and Stolz, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Related URLs: |
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