Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor

Lealman, I., Dosanjh, S., Rivers, L., O'Brien, S., Cannard, P., Sweeney, S.J. , Marko, I.P. and Rushworth, S. (2008) Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor. In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008, ISBN 9781424422586 (doi: 10.1109/ICIPRM.2008.4702913)

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Abstract

We have fabricated and assessed 1550 nm SIBH FP lasers using a novel Ruthenium precursor for MOVPE. Low temperature analysis revealed no unexpected defects and performance is similar to standard p-n-p-n current blocking devices. Accelerated aging at 85degC indicates no significant degradation after 5,700 hours on test.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Lealman, I., Dosanjh, S., Rivers, L., O'Brien, S., Cannard, P., Sweeney, S.J., Marko, I.P., and Rushworth, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN:1092-8669
ISBN:9781424422586
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