Chamings, J., Ahmed, S., Sweeney, S.J. , Odnoblyudov, V.A. and Tu, C.W. (2008) Physical properties and efficiency of GaNP light emitting diodes. Applied Physics Letters, 92(2), 021101. (doi: 10.1063/1.2830696)
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Abstract
GaNP∕GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP∕GaN0.006P0.994∕GaP LED structures are presented. Below ∼110K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6meV∕kbar, substantially lower than the Γ band gap of GaP (+9.5meV∕kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Chamings, J., Ahmed, S., Sweeney, S.J., Odnoblyudov, V.A., and Tu, C.W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
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