Tu, C.W., Odnoblyudov, V.A., Chamings, J., Ahmed, S., Sweeney, S.J. and Keogh, D.M. (2008) Materials and light-emitting diode properties of dilute-nitride GaNP/GaP heterostructures. In: 2008 Device Research Conference, Santa Barbara, California, USA, 23-25 Jun 2008, pp. 299-300. ISBN 9781424419425 (doi: 10.1109/DRC.2008.4800848)
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Abstract
In this paper GaNP/GaP LED structures are much simpler to grow than conventional process, chip processing uses existing technology, and GaNP/GaP LEDs exhibit only a small wavelength shift with injection current. With increasing temperature, the electroluminescence (EL) intensity decreases. Thus, GaNP/GaP LEDs are in the process of being commercialized.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Tu, C.W., Odnoblyudov, V.A., Chamings, J., Ahmed, S., Sweeney, S.J., and Keogh, D.M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Device Research Conference - Conference Digest, DRC |
| ISSN: | 1548-3770 |
| ISBN: | 9781424419425 |
| Related URLs: |
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