Soong, W.M., Ng, J.S., Steer, M.J., Hopkinson, M., David, J.P.R., Chamings, J., Sweeney, S.J. , Adams, A.R. and Allam, J. (2008) Dark current mechanisms in bulk GaInNAs photodiodes. In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008, ISBN 9781424422586 (doi: 10.1109/ICIPRM.2008.4702987)
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Abstract
We have grown a series of bulk GaInNAs p-i-n diodes and identified some of the dark current mechanisms present in our devices. With a nitrogen composition of ~4 %, the band gap can be reduced to 0.94 eV. We also demonstrate that low dark current density is achievable without compromising the absorption and hence quantum efficiency up to 1.4 mum.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Soong, W.M., Ng, J.S., Steer, M.J., Hopkinson, M., David, J.P.R., Chamings, J., Sweeney, S.J., Adams, A.R., and Allam, J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| ISSN: | 1092-8669 |
| ISBN: | 9781424422586 |
| Related URLs: |
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