Sharma, T.K., Hosea, T.J.C., Sweeney, S.J. and Tang, X. (2008) An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques. Journal of Applied Physics, 104(8), 083109. (doi: 10.1063/1.3005903)
Full text not currently available from Enlighten.
Abstract
InAs/InGaAs/InP quantum dots (QDs) emitting at ∼2 μm for midinfrared laser applications are studied using the complementary spectroscopic techniques of photoluminescence (PL), photoreflectance (PR), and surface photovoltage spectroscopy (SPS). We use a procedure that ensures that the same sample spot is studied virtually simultaneously by these three different spectroscopic techniques under almost identical conditions. We are able to measure the ground and excited states transitions of the InAs QDs without any ambiguity, thus providing a complete and clear understanding of the electronic transitions. Temperature dependent PL, SPS, and PR measurements provide a systematic thermal evolution of the ground and excited states. However, the QD transitions are not all seen together at any given temperature in either the PL or SPS measurements. By contrast, the PR technique can measure the complete set of ground and two excited state QD transitions and also the InGaAs barrier energy at all studied temperatures.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Sharma, T.K., Hosea, T.J.C., Sweeney, S.J., and Tang, X. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| ISSN (Online): | 1089-7550 |
| Related URLs: |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details