Fox, N. E., Sharma, T. K., Sweeney, S. J. and Hosea, T.J.C. (2009) Room temperature characterisation of InGaAlAs quantum well laser structures using electro-modulated reflectance and surface photovoltage spectroscopy. Physica Status Solidi A: Applications and Materials Science, 206(5), pp. 796-802. (doi: 10.1002/pssa.200881407)
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Abstract
In this study, two tri-metal quaternary InGaAlAs quantum well (QW) laser structures grown on InP are compared to a conventional InGaAsP QW structure, also grown on InP, all designed to lase at 1.55 μm. Several spectroscopic methods are used to study the samples including surface photo-voltage (SPV) and electro-modulated reflectance (ER). In the tri-metal samples the ground- and two excited-state QW transitions are detectable in both types of spectroscopy. The SPV and ER give results in agreement to within a few meV of each other. By comparing the position of the measured QW transitions with those predicted theoretically, the conduction band offsets of the tri-metal samples can be determined and compared to that in the InGaAsP sample. It is found that the tri-metal samples have a much larger conduction band offset of ∼66% compared to the ∼40% in the InGaAsP sample.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Fox, N. E., Sharma, T. K., Sweeney, S. J., and Hosea, T.J.C. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Physica Status Solidi A: Applications and Materials Science |
| Publisher: | Wiley |
| ISSN: | 1862-6300 |
| ISSN (Online): | 1862-6319 |
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