Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure

Ikyo, A.B., Marko, I.P., Adams, A.R., Sweeney, S.J. , Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C. (2009) Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure. IET Optoelectronics, 3(6), pp. 305-309. (doi: 10.1049/iet-opt.2009.0045)

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Abstract

High-pressure techniques are used to investigate and optimise the design of GaInAsSb/AlGaAsSb vertical cavity surface emitting lasers (VCSELs) emitting at 2.4 µm. From measurements on edge emitting lasers it is found that non-radiative Auger recombination accounts for up to 85% of the threshold current at room temperature (RT) and is responsible for their strong temperature sensitivity. The effect of Auger recombination in VCSELs may be mitigated through judicious design of the gain peak–cavity mode (CM) alignment which may be investigated using high pressure. Results show that temperature insensitivity over the range −10 to +30°C may be obtained around RT if the gain peak is offset by approximately 10 meV higher in energy from the VCSEL CM.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Ikyo, A.B., Marko, I.P., Adams, A.R., Sweeney, S.J., Bachmann, A., Kashani-Shirazi, K., and Amann, M.-C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IET Optoelectronics
Publisher:Wiley for Institution of Engineering and Technology
ISSN:1751-8776
ISSN (Online):1751-8776
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