Tan, L.J.J. et al. (2009) Dark current mechanisms in InxGa1-xAs1-yNy. In: 2009 IEEE LEOS Annual Meeting Conference Proceedings, Belek-Antalya, Turkey, 4-8 Oct 2009, pp. 233-234. ISBN 9781424436804 (doi: 10.1109/LEOS.2009.5343290)
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Abstract
In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of In x Ga 1-x As 1-y N y with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the In x Ga 1-x As 1-y N y material.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Tan, L.J.J., Soong, W.S., Tan, S.L., Goh, Y.L., Steer, M.J., Ng, J.S., David, J.P.R., Marko, I.P., Chamings, J., Allam, J., Sweeney, S.J., and Adams, A.R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| ISSN: | 1092-8081 |
| ISBN: | 9781424436804 |
| Related URLs: |
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