Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

Chamings, J., Ahmed, S., Adams, A. R., Sweeney, S. J. , Odnoblyudov, V. A., Tu, C. W., Kunert, B. and Stolz, W. (2009) Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes. Physica Status Solidi B: Basic Solid State Physics, 246(3), pp. 527-531. (doi: 10.1002/pssb.200880537)

Abstract

We use high pressure techniques to investigate the properties of two classes of “dilute-nitride-phosphide”-based devices; GaNP/GaP light emitting diodes for yellow–amber–red display applications and GaNAsP/GaP lasers, a potential route to producing lasers monolithically on silicon. Based upon high pressure electroluminescence measurements we find that the band anti-crossing (BAC) model reasonably describes the GaN(As)P system based on an average of the nitrogen states. In terms of device characteristics, we find that carrier leakage into the X-minima of GaP reduces the efficiency of GaNP/ GaP LEDs with increasing pressure. Lasing has been observed in GaNAsP/GaP devices with a pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ = 890 nm). A weak increase in threshold current with hydrostatic pressure indicates that a carrier leakage path that does not involve the GaP X -minima is the dominant carrier recombination mechanism in these devices, in contrast to the LEDs.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sweeney, Professor Stephen
• Authors: Chamings, J., Ahmed, S., Adams, A. R., Sweeney, S. J., Odnoblyudov, V. A., Tu, C. W., Kunert, B., and Stolz, W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Physica Status Solidi B: Basic Solid State Physics
• Publisher: Wiley
• ISSN: 0370-1972
• ISSN (Online): 1521-3951

Related URLs

• Other