Sayid, S. A., Marko, I. P., Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F. and Sweeney, S. J. (2010) Thermal Performance of 1.55μm InGaAlAs Quantum Well Buried Heterostructure Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 265-268. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516088)
Full text not currently available from Enlighten.
Abstract
We have investigated the threshold current Ith and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of Ith is due to non-radiative recombination which accounts for up to ~80% of Jth at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant non-radiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency, ηi , is ~80% at 20°C remaining stable up to 80°C. In contrast, the internal optical loss, αi , increases from 15 cm -1 at 20°C to 22 cm -1 at 80°C, consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marko, Dr Igor and Sweeney, Professor Stephen |
Authors: | Sayid, S. A., Marko, I. P., Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F., and Sweeney, S. J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
ISSN: | 1092-8669 |
ISBN: | 9781424459223 |
Related URLs: |
University Staff: Request a correction | Enlighten Editors: Update this record