Thermal Characteristics of 1.55 μm InGaAlAs Quantum Well Buried Heterostructure Lasers

Sayid, S. A., Marko, I. P., Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F. and Sweeney, S. J. (2010) Thermal Characteristics of 1.55 μm InGaAlAs Quantum Well Buried Heterostructure Lasers. IEEE Journal of Quantum Electronics, 46(5), pp. 700-705. (doi: 10.1109/JQE.2009.2039117)

Abstract

We have investigated the threshold current Ith and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of ith is due to nonradiative recombination, which accounts for up to ˜80% of Jth at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant nonradiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency ηi is ˜80% at 20°C remaining stable up to 80°C. In contrast, the internal optical loss, αi , increases from 15 cm -1 at 20°C to 22 cm -1 at 80°C, consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Sayid, S. A., Marko, I. P., Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F., and Sweeney, S. J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Journal of Quantum Electronics
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9197
• ISSN (Online): 1558-1713

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