Sayid, S. A., Marko, I. P., Adams, A. R., Sweeney, S. J. , Barrios, P. and Poole, P. (2010) Thermal Behavior of 1.55 μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 75-76. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642746)
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Abstract
Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a T o of ~72K from 220K-290K.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Sayid, S. A., Marko, I. P., Adams, A. R., Sweeney, S. J., Barrios, P., and Poole, P. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Conference Digest - IEEE International Semiconductor Laser Conference |
| ISSN: | 1947-6981 |
| ISBN: | 9781424456840 |
| Related URLs: |
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