Temperature Sensitivity of 1.55μm (100) InAs/InP-based Quantum Dot Lasers

Sayid, S. A., Marko, I. P., Sweeney, S. J. and Poole, P. (2010) Temperature Sensitivity of 1.55μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 23-24. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516172)

Abstract

Semiconductor lasers with quantum dot (QD) based active regions have generated a huge amount of interest for applications including communications networks due to their anticipated superior physical properties due to three dimensional carrier confinement. For example, the threshold current of ideal quantum dots is predicted to be temperature insensitive. We have investigated the operating characteristics of 1.55 μm InAs/InP (100) quantum dot lasers focusing on their carrier recombination characteristics using a combination of low temperature and high pressure measurements. By measuring the intrinsic spontaneous emission from a window fabricated in the n-contact of the devices we have measured the radiative component of the threshold current density, J rad . We find that J rad is itself relatively temperature insensitive (Fig. 1). However, the total threshold current density, J th , increases significantly with temperature leading to a characteristic temperature T 0 ~72 K around 220 K-290 K. From this data it is clear that the devices are dominated by a non-radiative recombination process which accounts for up to 94% of the threshold current at room temperature (Fig. 1).

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Sayid, S. A., Marko, I. P., Sweeney, S. J., and Poole, P.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Conference Proceedings - International Conference on Indium Phosphide and Related Materials
• ISSN: 1092-8669
• ISBN: 9781424459223

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