Hossain, N., Hild, K., Jin, S., Sweeney, S. J. , Yu, S.-Q., Johnson, S. R., Ding, D. and Zhang, Y.-H. (2010) Role of Growth Temperature on the Physical Characteristics of GaAsSb/GaAs QW Lasers. In: 2010 23rd Annual Meeting of the IEEE Photonics Society, Denver, Colorado, USA, 7-11 Nov 2010, pp. 59-60. ISBN 97814244-53689 (doi: 10.1109/PHOTONICS.2010.5698756)
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Abstract
Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth /QW of 138A/cm2 at RT.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Hild, Dr Konstanze and Sweeney, Professor Stephen |
| Authors: | Hossain, N., Hild, K., Jin, S., Sweeney, S. J., Yu, S.-Q., Johnson, S. R., Ding, D., and Zhang, Y.-H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 |
| ISSN: | 1092-8081 |
| ISBN: | 97814244-53689 |
| Related URLs: |
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