Hossain, N., Jin, S. R., Sweeney, S. J. , Liebich, S., Reinhard, S., Volz, K., Kunert, B. and Stolz, W. (2010) Physical Properties of Ga(NAsP)/GaP QW Lasers Grown by MOVPE. In: 2010 23rd Annual Meeting of the IEEE Photonics Society, Denver, CO, USA, 7-11 Nov2010, pp. 65-66. ISBN 9781424453689 (doi: 10.1109/PHOTONICS.2010.5698759)
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Abstract
We are reporting for the first time, lasing operation at room temperature (RT) with a low threshold current density (J th ) in novel direct band-gap Ga(NAsP)/GaP QW lasers. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hossain, N., Jin, S. R., Sweeney, S. J., Liebich, S., Reinhard, S., Volz, K., Kunert, B., and Stolz, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 |
| ISSN: | 1092-8081 |
| ISBN: | 9781424453689 |
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