Hossain, N., Jin, S. R., Sweeney, S. J. , Liebich, S., Ludewig, P., Zimprich, M., Kunert, B., Volz, K. and Stolz, W. (2010) On the Temperature Dependence of Monolithically Integrated Ga(NAsP)/(BGa)P/Si QW Lasers. In: Frontiers in Optics 2010/Laser Science XXVI, Rochester, NY, USA, 24–28 Oct 2010, (doi: 10.1364/FIO.2010.FWD6)
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Abstract
Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monolithically on a silicon substrate. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hossain, N., Jin, S. R., Sweeney, S. J., Liebich, S., Ludewig, P., Zimprich, M., Kunert, B., Volz, K., and Stolz, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Optics InfoBase Conference Papers |
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