MOVPE Growth and Characterization of Ga(NAsP) Laser Structures Monolithically Integrated on Si (001) Substrates

Liebich, S., Zimprich, M., Ludewig, P., Beyer, A., Volz, K., Stolz, W., Kunert, B., Hossain, N., Jin, S.R. and Sweeney, S.J. (2010) MOVPE Growth and Characterization of Ga(NAsP) Laser Structures Monolithically Integrated on Si (001) Substrates. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 143-144. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642712)

Full text not currently available from Enlighten.

Abstract

In this work we focus on the MOVPE growth of Ga(NAsP) laser structures for electrical current injection lattice matched on exactly orientated Si substrates and their structural characterization.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Sweeney, Professor Stephen
Authors: Liebich, S., Zimprich, M., Ludewig, P., Beyer, A., Volz, K., Stolz, W., Kunert, B., Hossain, N., Jin, S.R., and Sweeney, S.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Conference Digest - IEEE International Semiconductor Laser Conference
ISSN:1947-6981
ISBN:9781424456840
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record