Hossain, N., Jin, S. R., Sweeney, S. J. , Liebich, S., Ludewig, P., Zimprich, M., Kunert, B., Volz, K. and Stolz, W. (2010) Lasing Properties of Monolithically Integrated Ga(NAsP)/(BGa)P QW Lasers on a Silicon Substrate Grown by MOVPE. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 109-110. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642727)
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Abstract
Lasing operation up to 120K is reported for direct band-gap GaNAsP grown monolithically on a silicon substrate. Jth=0.81kAcm-2 is measured at 80K with a T0 of 97K from 40-120K for a HR coated device.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hossain, N., Jin, S. R., Sweeney, S. J., Liebich, S., Ludewig, P., Zimprich, M., Kunert, B., Volz, K., and Stolz, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Conference Digest - IEEE International Semiconductor Laser Conference |
| ISSN: | 1947-6981 |
| ISBN: | 9781424456840 |
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