InGaAsN as Absorber in APDs for 1.3 Micron Wavelength Applications

Ng, J.S., Tan, S.L., Goh, Y.L., Tan, C.H., David, J.P.R., Allam, J., Sweeney, S.J. and Adams, A.R. (2010) InGaAsN as Absorber in APDs for 1.3 Micron Wavelength Applications. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 187-190. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516060)

Abstract

Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm 2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al 0.8 Ga 0.2 As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al 0.8 Ga 0.2 As.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sweeney, Professor Stephen
• Authors: Ng, J.S., Tan, S.L., Goh, Y.L., Tan, C.H., David, J.P.R., Allam, J., Sweeney, S.J., and Adams, A.R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Conference Proceedings - International Conference on Indium Phosphide and Related Materials
• ISSN: 1092-8669
• ISBN: 9781424459223

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