Improved Performance of GaAsSb/GaAs SQW Lasers

Hossain, N., Jin, S.R., Sweeney, S.J. , Yu, S.-Q., Johnson, S.R., Ding, D. and Zhang, Y.-H. (2010) Improved Performance of GaAsSb/GaAs SQW Lasers. In: SPIE OPTO, 2010, San Francisco, California USA, 25-28 Jan 2010, ISBN 9780819480125 (doi: 10.1117/12.842253)

Abstract

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ~84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sweeney, Professor Stephen
• Authors: Hossain, N., Jin, S.R., Sweeney, S.J., Yu, S.-Q., Johnson, S.R., Ding, D., and Zhang, Y.-H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Proceedings of SPIE - The International Society for Optical Engineering
• ISSN: 0277-786X
• ISBN: 9780819480125

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