Sayid, S. A., Marko, I. P., Sweeney, S. J. , Barrios, P. and Poole, P. J. (2010) Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers. Applied Physics Letters, 97(16), 161104. (doi: 10.1063/1.3504253)
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Abstract
The threshold current density, Jth, and its radiative component, Jrad, in 1.55 μm InAs/InP (100) quantum dot lasers are measured as a function of temperature and hydrostatic pressure. We find that Jrad is relatively temperature insensitive. However, Jth increases significantly with temperature leading to a characteristic temperature T0=72 K over the range 220–290 K. Nonradiative recombination accounts for up to 94% of Jth at T=293 K. Jth decreases with increasing pressure by 35% over 8 kbar causing an increase in T0 from 72 to 88 K. The results indicate that nonradiative Auger recombination determines temperature behavior of these devices and T0 value.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Sayid, S. A., Marko, I. P., Sweeney, S. J., Barrios, P., and Poole, P. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
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