Sweeney, S. J. (2010) Bismide-alloys For Higher Efficiency Infrared Semiconductor Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 111-112. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642728)
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Abstract
The incorporation of Bismuth in III-V alloys, such as GaAsBi/GaAs provides a preferential semiconductor band structure to suppress non-radiative recombination and optical losses, improving the efficiency and temperature stability of infrared semiconductor lasers.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Sweeney, S. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Conference Digest - IEEE International Semiconductor Laser Conference |
| ISSN: | 1947-6981 |
| ISBN: | 9781424456840 |
| Related URLs: |
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