The Potential Role of Bismide Alloys in Future Photonic Devices

Sweeney, S.J. , Batool, Z., Hild, K., Jin, S.R. and Hosea, T.J.C. (2011) The Potential Role of Bismide Alloys in Future Photonic Devices. In: 2011 13th International Conference on Transparent Optical Networks, Stockholm, Sweden, 26-30 Jun 2011, ISBN 9781457708800 (doi: 10.1109/ICTON.2011.5970829)

Abstract

In a similar manner to the dilute nitrides, the incorporation of Bismuth in semiconductors such as GaAs is predicted to lead to a band-anti-crossing effect (in the valence band) causing a large band gap bowing. In addition, the large size of Bismuth atoms gives rise to a large spin-orbit splitting. This opens-up interesting new possibilities for efficient photonic devices, such as near- and mid-infrared lasers which are more thermally stable and less susceptible to losses compared to conventional InP-based devices. Since Bismuth principally influences the valence band, while nitrogen influences the conduction band, combining Bismuth and Nitrogen in III-V alloys offers huge potential for engineering the conduction and valence band offsets, the band gap and spin-orbit splitting, with wide scope for the design of photonic devices.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hild, Dr Konstanze and Sweeney, Professor Stephen
• Authors: Sweeney, S.J., Batool, Z., Hild, K., Jin, S.R., and Hosea, T.J.C.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: International Conference on Transparent Optical Networks
• ISSN: 21627339
• ISBN: 9781457708800

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