Mohmad, A.R., Bastiman, F., Hunter, C.J., Ng, J.S., Sweeney, S.J. and David, J.P.R. (2011) The effect of Bi composition to the optical quality of GaAs1−xBix. Applied Physics Letters, 99(4), 042107. (doi: 10.1063/1.3617461)
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Abstract
GaAs1−xBix alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x < 0.025 improve the material quality of this low temperature growth alloys by reducing the density of gallium (Ga) and/or arsenic related defects. The crystal quality starts to degrade at higher Bi concentration probably due to significant amount of Bi-related defects, BiGa. However, the room temperature PL intensity continues to increase with Bi content for the range studied due to greater band-gap offset between GaAs and GaAs1−xBix. Analysis carried out shows no correlation between localization effects and the room temperature PL enhancement.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Mohmad, A.R., Bastiman, F., Hunter, C.J., Ng, J.S., Sweeney, S.J., and David, J.P.R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Related URLs: |
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