Strain Engineering of the Electroabsorption Response in Ge/SiGe Multiple Quantum Well Heterostructures

Lever, L. et al. (2011) Strain Engineering of the Electroabsorption Response in Ge/SiGe Multiple Quantum Well Heterostructures. In: 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 4-16 Sep 2011, pp. 107-108. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053731)

Abstract

Many fibre-optic telecommunications systems exploit the spectral 'window' at 1310 nm, which corresponds to zero dispersion in standard single-mode fibres (SMFs). In particular, several passive optical network (PON) architectures use 1310nm for upstream signals, and so compact, low-cost and low-power modulators operating at 1310 nm that can be integrated into Si electronic-photonic integrated circuits would be extremely desirable for future fibre-to-the-home (FTTH) applications.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Lever, L., Hu, Y., Myronov, M., Liu, X., Owens, N., Gardes, F.Y., Marko, I.P., Sweeney, S.J., Ikonić, Z., Leadley, D.R., Reed, G.T., and Kelsall, R.W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE International Conference on Group IV Photonics GFP
• ISSN: 19492081
• ISBN: 9781424483389

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