Hossain, N., Sweeney, S.P. , Rogowsky, S., Ostendorf, R., Wagner, J., Liebich, S., Zimprich, M., Volz, K., Kunert, B. and Stolz, W. (2011) Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE. Electronics Letters, 47(16), pp. 931-933. (doi: 10.1049/el.2011.1927)
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Abstract
Recent significant improvements in Ga(NAsP)/GaP quantum well lasers grown by metal organic vapour phase epitaxy on a GaP substrate are reported. At room temperature, the devices show a threshold current density of 4.0 kAcm−2 at a lasing wavelength of 981 nm for a cavity length of 1 mm and a characteristic temperature of 58 K in the temperature region of 220–295 K. These improvements further verify the possible application for the novel III/V Ga(NAsP)/GaP material system to integrate long-term stable laser diodes in a standard CMOS-compatible electronic chip.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hossain, N., Sweeney, S.P., Rogowsky, S., Ostendorf, R., Wagner, J., Liebich, S., Zimprich, M., Volz, K., Kunert, B., and Stolz, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Wiley for The Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
| Related URLs: |
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