Hossain, N., Jin, S.R., Sweeney, S.J. , Liebich, S., Ludewig, P., Zimprich, M., Volz, K., Kunert, B. and Stolz, W. (2011) Physical Properties of Monolithically Integrated Ga(NAsP)/(BGa)P QW Lasers on Silicon. In: IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 14-16 Sep 2011, pp. 148-150. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053745)
Full text not currently available from Enlighten.
Abstract
This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm-2 and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hossain, N., Jin, S.R., Sweeney, S.J., Liebich, S., Ludewig, P., Zimprich, M., Volz, K., Kunert, B., and Stolz, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE International Conference on Group IV Photonics GFP |
| ISSN: | 1949-2081 |
| ISBN: | 9781424483389 |
| Related URLs: |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details