Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Hild, K., Marko, I.P., Johnson, S.R., Yu, S.-Q., Zhang, Y.-H. and Sweeney, S.J. (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers. Applied Physics Letters, 99(7), 071110. (doi: 10.1063/1.3625938)

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Abstract

In this letter, we measure the pure spontaneous emission and lasing emission from a working vertical cavity surface emitting laser (VCSEL) for a wide range of temperatures. From this spontaneous emission, we gain insight into the temperature dependence of the radiative component of the threshold current (and hence gain). Together with the temperature dependence of the threshold current, the cavity mode to gain peak alignment and the temperature dependence of an equivalent active region edge emitting laser, we show how non-radiative recombination coupled with gain-cavity de-tuning influences the thermal properties of these devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Hild, K., Marko, I.P., Johnson, S.R., Yu, S.-Q., Zhang, Y.-H., and Sweeney, S.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118
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