GaInNAsSb/GaAs photodiodes for long-wavelength applications

Tan, S. L. et al. (2011) GaInNAsSb/GaAs photodiodes for long-wavelength applications. IEEE Electron Device Letters, 32(7), pp. 919-921. (doi: 10.1109/LED.2011.2145351)

Abstract

GaInNAsSb p-i-n photodetectors on GaAs substrates capable of detecting wavelengths up to 1550 nm with a reduced dark current are presented in this letter. Responsivities of 0.18 A/W at 1300 nm and 0.098 A/W at 1550 nm were achieved in devices with a ~0.5-μm-thick GaInNAsSb p-i-n epitaxial layer with 10% In, 4.08% N, and 4.4% Sb. The absorption coefficient (α) spectra show that α is intrinsically higher than that of the indirect-gap Ge layer but ~2.6 times lower than that reported for a In 0.53 Ga 0.47 As epitaxial layer at 1550 nm. The dark currents of the GaInNAsSb devices are found to be lower than not only those of the GaInNAs devices of a similar energy gap but also the state-of-the-art Ge/Si avalanche photodiodes. The lower dark currents in the GaInNAsSb devices compared with the GaInNAs devices can possibly be attributed to the reduction of defects in the Sb-containing epitaxial layer.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Tan, S. L., Zhang, S., Soong, W. M., Goh, Y. L., Tan, L. J. J., Ng, J. S., David, J. P. R., Marko, I. P., Adams, A. R., Sweeney, S. J., and Allam, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Electron Device Letters
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0741-3106
• ISSN (Online): 1558-0563

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