Marko, I.P. et al. (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications. Applied Physics Letters, 101(22), 221108. (doi: 10.1063/1.4768532)
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Abstract
Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, Eg, and spin-orbit splitting, ΔSO, respectively. The possibility of achieving ΔSO > Eg and a reduced temperature (T) dependence for Eg are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure Eg(x, T) and ΔSO (x, T) in In0.53Ga0.47BixAs1−x/InP samples for 0 ≤ x ≤ 0.039 by various complementary optical spectroscopic techniques. While we find no clear evidence of a decreased dEg/dT (≈0.34 ± 0.06 meV/K in all samples) we find ΔSO > Eg for x > 3.3–4.3%. The predictions of a valence band anti-crossing model agree well with the measurements.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Marko, I.P., Batool, Z., Hild, K., Jin, S.R., Hossain, N., Hosea, T.J.C., Petropoulos, J.P., Zhong, Y., Dongmo, P.B., Zide, J.M.O., and Sweeney, S.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Related URLs: |
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