Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys

Mohmad, A.R., Bastiman, F., Ng, J.S., Sweeney, S.J. and David, J.P.R. (2012) Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys. Physica Status Solidi C, 9(2), pp. 259-261. (doi: 10.1002/pssc.201100256)

Abstract

The optical properties of GaAs1-xBix alloys with Bi compositions between 0.022 and 0.06 have been studied by photoluminescence (PL). The samples were grown at 400 °C using molecular beam epitaxy. At room temperature, the incorporation of Bi in GaAs reduces the band gap by 64 meV/%Bi with peak wavelength of 1.2 µm for x = 0.06. It was found that room temperature PL intensity increased with Bi composition, but decreases with composition at 10 K. The results at 10 K suggest that the incorporation of Bi degrades the crystal quality. However, the effect is negated by more efficient carrier confinement as a result of larger band gap offset between GaAs1-xBix and GaAs at room temperature. Hence, the room temperature PL intensity continues to increase monotonically for x up to 0.06.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sweeney, Professor Stephen
• Authors: Mohmad, A.R., Bastiman, F., Ng, J.S., Sweeney, S.J., and David, J.P.R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Physica Status Solidi C
• Publisher: Wiley
• ISSN: 1862-6351
• ISSN (Online): 1610-1642

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