InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content

Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)

Abstract

Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, E g , and spin-orbit splitting, ΔSO , respectively. The possibility of achieving ΔSO >;Eg and a reduced temperature (T) dependence for Eg are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure Eg (x, T) and ΔSO (x, T) in In 0.53 Ga 0.47 Bi x As 1-x /InP samples for 0≤x≤0.032 by optical spectroscopy. While we find no clear evidence of a decreased dEg /dT (≈0.33±0.07meV/K in all samples) we find ΔSO >;Eg for x>;3.3-4.3%. The predictions of a valence band anti-crossing model agree well with the measurements.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Hosea, T.J.C., Marko, I.P., Batool, Z., Hild, K., Jin, S.R., Hossain, N., Chai, G.M.T., Sweeney, S.J., Petropoulos, J.P., Zhong, Y., Dongmo, P.B., and Zide, J.M.O.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings
• ISSN: 2330-5665
• ISBN: 9781467314633

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