Hossain, N., Jin, S.R., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W. and Sweeney, S.J. (2012) Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers. Applied Physics Letters, 101(1), 011107. (doi: 10.1063/1.4733312)
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Abstract
We report on the carrier recombination mechanisms in dilute nitride Ga(NAsP)/GaP quantum well lasers. Spontaneous emission measurements show that defect-related recombination in the devices is less significant compared with other GaAs-based dilute nitride lasers. From temperature dependent measurements, we find that the threshold current density, Jth is dominated by non-radiative recombination process(es), which account for at least 91% of Jth at room temperature. The characteristic temperature, T0 (T1) is measured to be ∼104 K (∼99 K) around 200 K, which drops to ∼58 K ( ∼37 K) around room temperature. Hydrostatic pressure measurements reveal a strong increase of threshold current with increasing pressure. This implies that current leakage dominates carrier recombination which is also responsible for their low T0 and T1 values at room temperature.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hossain, N., Jin, S.R., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W., and Sweeney, S.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Related URLs: |
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