Mohmad, A.R., Bastiman, F., Hunter, C.J., Richards, R., Sweeney, S.J. , Ng, J.S. and David, J.P.R. (2012) Effects of rapid thermal annealing on GaAs1-xBix alloys. Applied Physics Letters, 101(1), 012106. (doi: 10.1063/1.4731784)
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Abstract
The effects of rapid thermal annealing on the optical and structural properties of GaAs1-xBix alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the annealed GaAs1-xBix showed modest improvement (∼3 times) in photoluminescence (PL) while the PL peak wavelength remained relatively unchanged. It was found that bismuth related defects are not easily removed by annealing and the PL improvement may be dominated by the reduction of other types of defects including arsenic and gallium related defects. Also, the optimum annealing temperature is Bi composition dependent. For samples with x < 0.048, the optimum annealing temperature is 700 °C but reduces to 600 °C for higher compositions.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Mohmad, A.R., Bastiman, F., Hunter, C.J., Richards, R., Sweeney, S.J., Ng, J.S., and David, J.P.R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Related URLs: |
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