Hunter, C.J., Bastiman, F., Mohmad, A.R., Richards, R., Ng, J.S., Sweeney, S.J. and David, J.P.R. (2012) Absorption characteristics of GaAs1-xBix/GaAs diodes in the near-infrared. IEEE Photonics Technology Letters, 24(23), pp. 2191-2194. (doi: 10.1109/LPT.2012.2225420)
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Abstract
The absorption properties of a series of GaAs1−xBix layers with ∼6% Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAs1−xBix layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 μm . The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing).
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hunter, C.J., Bastiman, F., Mohmad, A.R., Richards, R., Ng, J.S., Sweeney, S.J., and David, J.P.R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Photonics Technology Letters |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 1041-1135 |
| ISSN (Online): | 1941-0174 |
| Related URLs: |
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