The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers

Ikyo, B. A., Marko, I. P., Hild, K., Adams, A. R., Arafin, S., Amann, M.-C. and Sweeney, S. J. (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/cleoe-iqec.2013.6800690)

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Abstract

In this work, temperature and hydrostatic pressure have been used independently to tune the bandgap of GaInAsSb type-I edge emitting lasers. The dependence of J th , Auger current (J Auger) and radiative current (J rad) on the band gap of these devices is presented.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Ikyo, B. A., Marko, I. P., Hild, K., Adams, A. R., Arafin, S., Amann, M.-C., and Sweeney, S. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics InfoBase Conference Papers
ISSN:2162-2701
ISBN:9781479905942
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