Maspero, R., Sweeney, S.J. and Florescu, M. (2013) Modelling the Auger Recombination Rates of GaAs(1-x)Bi x Alloys. In: 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Vancouver, British Colombia, Canada, 19-22 Aug 2013, pp. 81-82. ISBN 9781467363105 (doi: 10.1109/NUSOD.2013.6633134)
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Abstract
We calculate the |Conduction, Heavy Hole (HH)〉 - |Split-off Hole (SO), HH〉 (CHSH) Auger Recombination rates for GaAs (1-x) Bi x alloys, which are candidates for highly efficient telecommunication devices. A ten-band, tight-binding method, including spin-orbit coupling, was performed on a 9×9×9 strained supercell in order to generate an accurate band structure to perform the calculation on. This band structure was then unfolded to give a true E-k relation. As predicted by experiment, there should be a decrease in the Auger recombination rate as the concentration of Bismuth increases ending in a suppression at greater than ~11% Bismuth.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Maspero, R., Sweeney, S.J., and Florescu, M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013 |
| ISSN: | 2158-3242 |
| ISBN: | 9781467363105 |
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