Investigating the Efficiency Limitations of GaN-based Emitters

Crutchley, B. G., Marko, I. P., Adams, A. R. and Sweeney, S. J. (2013) Investigating the Efficiency Limitations of GaN-based Emitters. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/CLEOE-IQEC.2013.6801007)

Abstract

In this study low temperature and high pressure techniques have been used to investigate the recombination processes taking place in InGaN-based quantum well light emitting diodes (LEDs) which have emission across the blue-green region. Despite relatively high peak efficiencies of the GaN-based emitters, there remain issues relating to the strong efficiency reduction at higher currents that are required for normal operation in most applications. It is observed that there is a relative reduction in efficiency as injection current is increased in a phenonmenon which is known as efficiency droop. There are three main arguments for the cause of efficiency droop that are discussed in the literature: non-radiative Auger recombination, carrier leakage and a defect-related loss mechanism. In spite of extensive research to date, there is little agreement on the cause of efficiency droop as most experiments can only measure the overall efficiency behaviour leading to difficulties in determining the individual contributions from the different loss mechanisms.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Crutchley, B. G., Marko, I. P., Adams, A. R., and Sweeney, S. J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Optics InfoBase Conference Papers
• ISSN: 2162-2701
• ISBN: 9781479905942

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