InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

Jin, S. and Sweeney, S. J. (2013) InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices. Journal of Applied Physics, 114(21), 213103. (doi: 10.1063/1.4837615)

Abstract

We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3–0.8 eV (1.5–4 μm) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (ΔSO) is large and controllable and can, for example, be made larger than the band gap (Eg) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sweeney, Professor Stephen
• Authors: Jin, S., and Sweeney, S. J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Applied Physics
• Publisher: American Institute of Physics
• ISSN: 0021-8979
• ISSN (Online): 1089-7550

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